BFP193W_07 INFINEON [Infineon Technologies AG], BFP193W_07 Datasheet - Page 2

• Manufacturer Part Number: BFP193W_07
• Description: NPN Silicon RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
C
C
CE
CB
EB
= 1 mA, I
= 30 mA, V
= 1 V, I
= 20 V, V
= 10 V, I
B
C
E
= 0
= 0
CE
BE
= 0
= 8 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
70
-
-
-
Values
typ.
100
-
-
-
-
max.
2007-04-20
100
100
140
BFP193W
1
-
Unit
V
µA
nA
µA
-