BFP540ESD_09 INFINEON [Infineon Technologies AG], BFP540ESD_09 Datasheet - Page 6

• Manufacturer Part Number: BFP540ESD_09
• Description: NPN Silicon RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Third order Intercept Point IP
(Output, Z
V
Power gain G
V
CE
CE
30
25
20
15
10
45
40
35
30
25
20
15
10
= parameter, f = 900 MHz
= 3 V, I
5
0
5
0
0
10
S
1
C
= Z
|S
G
ms
21
= 25 mA
20
ma
|
2
L
= 50 Ω )
, G
2
30
ms
I
f [GHz]
C
[mA]
40
3
= ƒ (f)
G
ma
50
4
3
60
4.00V
1.00V
= ƒ (I
5
70
1.50V
2.00V
3.00V
C
)
80
6
6
Transition frequency f
V
Power gain G
V
f = parameter in GHz
CE
CE
30
25
20
15
10
28
26
24
22
20
18
16
14
12
10
= parameter in V, f = 2 GHz
= 3 V
5
0
8
6
0
0
10
10
20
20
ma
30
30
, G
40
40
ms
I
I
C
C
[mA]
[mA]
50
50
= ƒ (I
T
= ƒ (I
60
60
C
BFP540ESD
70
)
70
2009-12-04
C
)
3 − 4.5V
80
80
2.00V
1.00V
0.75V
0.50V
0.90GHz
1.80GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
90
90
100
100