BFP620E7764 INFINEON [Infineon Technologies AG], BFP620E7764 Datasheet
BFP620E7764
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BFP620E7764 Summary of contents
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NPN Silicon Germanium RF Transistor High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications Outstanding noise figure 1.8 GHz ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 1 GHz C CE Collector-base capacitance MHz CB Collector emitter ...
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SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: 0. 1000 V VAF = VAR = 2.707 RBM = 250.7 fF CJE = 1.43 ps ...
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Total power dissipation P tot 200 mW 160 140 120 100 Permissible Pulse Load totmax totDC ...
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Third order Intercept Point IP (Output = parameter 900MHz - CE 27 dBm 0. Power ...
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Power gain 50mA Parameter in GHz 0.2 0 0.9 1.8 2 ...