BSZ160N10NS3G INFINEON [Infineon Technologies AG], BSZ160N10NS3G Datasheet - Page 6

• Manufacturer Part Number: BSZ160N10NS3G
• Description: OptiMOS3 Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
40
35
30
25
20
15
10
DS
=f(T
5
0
4
3
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=20 A; V
20
20
98%
GS
=10 V
V
T
DS
j
60
40
[°C]
Typ
[V]
100
60
140
Ciss
Crss
Coss
180
page 6
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
10
=f(T
1
SD
4
3
2
1
0
0.0
-60
)
j
); V
j
GS
-20
=V
0.5
DS
20
33 µA
150 °C
V
T
SD
1.0
j
60
[°C]
[V]
BSZ160N10NS3 G
25 °C
330 µA
25 °C
150 °C
100
1.5
140
2009-11-12
180
2.0