BSS119_06 INFINEON [Infineon Technologies AG], BSS119_06 Datasheet
BSS119_06
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BSS119_06 Summary of contents
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SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Type Package PG-SOT23 BSS119 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current T =25°C A Reverse diode dv/dt I =0.17A, ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =250µ Gate threshold voltage =50µA D Zero gate voltage drain ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot A BSS119 0.38 W 0.32 0.28 0.24 0.2 0.16 0.12 0.08 0. Safe operating area ...
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Typ. output characteristic parameter ° 0.34 10V 0.28 4.8V 4.6V 0.24 4V 3.8V 3.4V 0.2 0.16 0.12 0.08 0. ...
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Drain-source on-state resistance DS(on) j parameter : BSS119 98 typ 2 0 -60 - Typ. ...
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Typ. gate charge parameter 0.17 A pulsed BSS119 0 max 8 0 max 0 max 6 4 ...
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Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...