BSS138N_09 INFINEON [Infineon Technologies AG], BSS138N_09 Datasheet - Page 7

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BSS138N_09

Manufacturer Part Number
BSS138N_09
Description
SIPMOS Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 2.82
13 Typ. gate charge
V
parameter: V
GS
=f(Q
12
10
8
6
4
2
0
0
gate
); I
DD
D
=0.23 A pulsed
0.2
0.4
Q
12 V
gate
[nC]
0.6
48 V
0.8
30 V
page 7
1
14 Drain-source breakdown voltage
V
BR(DSS)
70
65
60
55
50
-60
=f(T
j
); I
-20
D
=250 µA
20
T
j
60
[°C]
100
BSS138N
140
2009-02-11
180

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