K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 11

• Manufacturer Part Number: K9F1208Q0A-XXB0
• Description: 512Mb/256Mb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0C-XCB0
DC AND OPERATING CHARACTERISTICS
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operat-
Current
Supply Voltage
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
ing
Parameter
Parameter
Sequential Read
Program
Erase
Parameter
Symbol
V
V
V
CCQ
CC
SS
K9F56XXX0C-XCB0
K9F56XXX0C-XCB0
K9F56XXX0C-XIB0
K9F56XXX0C-XIB0
SS
Symbol
I
OL
I
I
I
I
I
V
V
CC
CC
CC
V
V
SB
SB
I
(R/B)
I
LO
OH
LI
OL
IH
IL
1
2
1
2
3
1.70
1.70
Min
0
CC,
tRC=50ns, CE=V
I
CE=V
CE=V
V
V
I/O pins
Except I/O pins
K9F56XXQ0C :I
K9F56XXU0C :I
K9F56XXQ0C :I
K9F56XXU0C :I
K9F56XXQ0C :V
K9F56XXU0C :V
OUT
IN
OUT
+0.3V which, during transitions, may overshoot to V
K9F56XXQ0C(1.8V)
=0 to Vcc(max)
=0mA
Test Conditions
=0 to Vcc(max)
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
IH
CC
:
T
, WP=0V/V
A
-0.2, WP=0V/V
=0 to 70 C, K9F56XXX0C-XIB0
Typ.
1.8
1.8
0
-
-
-
OH
OL
OH
OL
OL
OL
IL
Symbol
V
=2.1mA
=100uA
(Recommended operating conditions otherwise noted.)
=-100 A
=-400 A
CC
V
T
T
=0.1V
=0.4V
IN/OUT
V
Ios
BIAS
CCQ
STG
CC
10
CC
Max
1.95
1.95
0
V
V
V
CC
CCQ
K9F56XXQ0C(1.8V)
K9F56XXQ0C(1.8V)
CC
Min
-0.3
Q-0.1
3
-
-
-
-
-
-
-
-
-0.4
-0.6 to + 2.45
-0.2 to + 2.45
-0.2 to + 2.45
-0.4
Min
2.7
2.7
0
:
T
Typ
10
A
8
8
8
4
-
-
-
-
-
-
-
-
=-40 to 85 C)
K9F56XXU0C(3.3V)
CC
-10 to +125
-40 to +125
-65 to +150
+2.0V for periods <20ns.
V
+0.3
+0.3
Max
V
Rating
0.4
0.1
15
15
15
50
CCQ
1
10
10
CC
-
-
5
Typ.
3.3
3.3
0
K9F56XXU0C(3.3V)
FLASH MEMORY
Min
-0.3
2.0
2.0
2.4
K9F56XXU0C(3.3V)
8
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
-
-
-
-
-
-
-
-
Typ
10
10
10
10
10
-
-
-
-
-
-
-
-
Max
3.6
3.6
0
V
V
CCQ
CC
Max
0.8
0.4
20
25
25
50
1
10
10
+0.3
-
-
+0.3
Unit
Unit
mA
V
V
V
V
C
C
Unit
mA
mA
V
A