K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 35

• Manufacturer Part Number: K9F1208Q0A-XXB0
• Description: 512Mb/256Mb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

WPx = H &
Lock block command (2Ah)
WPx = H &
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
Lock-tight block command (2Ch)
R/B
I/Ox
On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10 s(
Program/Erase OPERATION(In Locked or Lock-tighten Block)
60h(80h)
Address(&Data Input)
Unlock block Command (23h) + Start Block Address
Block Lock reset
WPx = L (>100ns)
WPx = H &
Lock-tight
Figure 15. State diagram of Block Lock
unlock
Lock
Lock
Lock
Locked or Lock-tighten Block address
+ Command (24h) + End Block Address
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
Unlock block Command (23h) + Start Block Address
D0h(10h)
Block Lock reset
WPx = L (>100ns)
WPx = H &
+ Command (24h) + End Block Address
Power-up
34
t
LBSY
WPx = H &
Lock-tight block command (2Ch)
FLASH MEMORY
t
LBSY)
Lock-tight
Lock-tight
unlock
unlock
Lock
Lock