K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 34

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K9F1208Q0A-XXB0

Manufacturer Part Number
K9F1208Q0A-XXB0
Description
512Mb/256Mb 1.8V NAND Flash Errata
Manufacturer
Samsung semiconductor
Datasheet
3) Lock-tight
2) Unlock
CLE
CE
WE
I/Ox
CLE
CE
WE
ALE
I/Ox
- Command Sequence: Lock-tight block Command(2Ch)
- Only locked blocks can be lock-tighten by lock-tight command.
WP
- Lock-tighten blocks offer the user an additional level of write protection beyond that of a regular lock block. A block that is lock-
- Command Sequence: Unlock block Command(23h) + Start block address + Command(24h) + End block address
- Unlocked blocks can be programmed or erased.
- An unlocked block’ s status can be changed to the locked or lock-tighten state using the appropriate commands.
- Only one consecutive area can be released to unlock state from lock state; Unlocking multi area is not available.
- Start block address must be nearer to the logical LSB(Least Significant Bit) than End blcok address.
- One block is selected for unlocking block when Start block address is same as End block address.
WP
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
tighten can’ t have it’ s state changed by software control, only by hardware control(WP low pulse input); Unlocking multi area is not
available
Unock Command
Lock-tight Command
2Ch
23h
Start Block Address 2cycles
Add.1
Add.2
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
33
Unlock Command
24h
End Block Address 2 cycles
FLASH MEMORY
Add.1
Add.2

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