K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 25

• Manufacturer Part Number: K9F1208Q0A-XXB0
• Description: 512Mb/256Mb 1.8V NAND Flash Errata
• Manufacturer: Samsung semiconductor

K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
COPY-BACK PROGRAM OPERATION
CLE
CE
WE
ALE
RE
R/B
BLOCK ERASE OPERATION
I/Ox
I/Ox
CLE
CE
WE
ALE
RE
R/B
Auto Block Erase
Setup Command
00h
t
WC
60h
t
WC
Column
Address
Col. Add
A9~A16
Page(Row)
Row Add1
Address
Page(Row)
Address
A17~A24
Row Add2
(ERASE ONE BLOCK)
Erase Command
t
WB
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
DOh
t
R
Busy
t
WB
Program
Command
24
8Ah
Column
Address
A
Busy
0
~A
7
t
BERS
A
9
Page(Row)
~A
Address
16
A
17
~A
t
WB
24
Read Status
Command
t
70h
PROG
Busy
FLASH MEMORY
I/O
I/O
0
0
=0 Successful Program
=1 Error in Program
I/O
I/O
Read Status
Command
0
0
=1 Error in Erase
=0 Successful Erase
I/O 0
70h
I/O
0