K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 21

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K9F1208Q0A-XXB0

Manufacturer Part Number
K9F1208Q0A-XXB0
Description
512Mb/256Mb 1.8V NAND Flash Errata
Manufacturer
Samsung semiconductor
Datasheet
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
ALE
* Input Data Latch Cycle
CLE
CE
WE
CE
RE
R/B
I/Ox
I/Ox
* Sequential Out Cycle after Read
t
ALS
NOTES : Transition is measured 200mV from steady state voltage with load.
t
RR
t
WP
t
DS
DIN 0
t
t
WC
This parameter is sampled and not 100% tested.
REA
t
DH
t
t
RP
WH
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
Dout
t
RC
(CLE=L, WE=H, ALE=L)
t
REH
t
WP
t
DS
DIN 1
t
REA
20
t
DH
Dout
t
RHZ*
t
WP
t
DIN n
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
CHZ*
RHZ*
t
OH
t
OH

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