K9F1208Q0A-XXB0 Samsung semiconductor, K9F1208Q0A-XXB0 Datasheet - Page 19
![no-image](/images/manufacturer_photos/0/5/578/samsung_semiconductor_sml.jpg)
K9F1208Q0A-XXB0
Manufacturer Part Number
K9F1208Q0A-XXB0
Description
512Mb/256Mb 1.8V NAND Flash Errata
Manufacturer
Samsung semiconductor
Datasheet
1.K9F1208Q0A-XXB0.pdf
(39 pages)
- Current page: 19 of 39
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K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
System Interface Using CE don’ t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte/264word page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addi-
tion, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading
and reading would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’ t-care.
CLE
CE
WE
ALE
Figure 7. Read Operation with CE don’ t-care.
CE
WE
I/Ox
R/B
WE
CLE
ALE
CE
RE
I/Ox
t
CS
00h
80h
Start Add.(3Cycle)
Start Add.(3Cycle)
t
WP
On K9F5608U0C_Y,P or K9F5608U0C_V,F
CE must be held
low during tR
t
CH
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
t
R
Data Input
18
I/O
CE
RE
0
~
15
CE don’ t-care
CE don’ t-care
t
Data Output(sequential)
CEA
t
REA
FLASH MEMORY
Data Input
out
t
OH
10h
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