GS815018AB GSI [GSI Technology], GS815018AB Datasheet - Page 20

• Manufacturer Part Number: GS815018AB
• Description: 1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
• Manufacturer: GSI [GSI Technology]

JTAG Port Recommended Operating Conditions and DC Characteristics
Rev: 1.05 10/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Input Under/overshoot voltage must be –1 V > Vi < V
V
0 V ≤ V
Output Disable, V
The TDO output driver is served by the V
I
I
I
I
OHJ
OLJ
OHJC
OLJC
ILJ
= + 4 mA
= –4 mA
≤ V
= –100 uA
= +100 uA
IN
IN
TMS, TCK and TDI Input Leakage Current
TMS, TCK and TDI Input Leakage Current
≤ V
≤ V
3.3 V Test Port Input High Voltage
2.5 V Test Port Input High Voltage
3.3 V Test Port Input Low Voltage
2.5 V Test Port Input Low Voltage
ILJn
TDO Output Leakage Current
Test Port Output High Voltage
Test Port Output Low Voltage
DDQ
Test Port Output CMOS High
Test Port Output CMOS Low
OUT
= 0 to V
Parameter
DDQ
DDQ
supply.
DDn
20/25
+1 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tTKC.
Symbol
V
V
V
V
V
V
V
I
V
I
I
INHJ
OHJC
INLJ
OLJC
OLJ
IHJ3
IHJ2
ILJ3
ILJ2
OHJ
OLJ
V
DDQ
0.6 * V
Min.
–300
–0.3
–0.3
– 100 mV
2.0
1.7
–1
–1
—
—
GS815018/36AB-357/333/300/250
DDQ2
0.3 * V
V
V
DDQ2
100 mV
DD3
Max.
100
0.8
0.4
—
—
1
1
+0.3
DDQ2
+0.3
© 2003, GSI Technology
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Unit Notes
uA
uA
uA
V
V
V
V
V
V
V
V
5, 6
5, 7
5, 8
5, 9
1
1
1
1
2
3
4