AM29BDS128HD8VFI AMD [Advanced Micro Devices], AM29BDS128HD8VFI Datasheet - Page 60

• Manufacturer Part Number: AM29BDS128HD8VFI
• Description: 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two
2. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Notes:
1. Figure shows total number of wait states set to four cycles. The total number of wait states can be programmed from two
2. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and is indicated by RDY.
3. The device is in synchronous mode.
58
cycles to seven cycles.
cycles to seven cycles. Clock is set for active falling edge.
Addresses
Addresses
AVD#
AVD#
CE#f
Data
Data
RDY
RDY
CLK
OE#
CE#
CLK
OE#
t
Hi-Z
t
AVC
ACS
t
t
AVC
Hi-Z
ACS
Figure 17. CLK Synchronous Burst Mode Read (Falling Active Clock)
Figure 16. CLK Synchronous Burst Mode Read (rising active CLK)
t
CR
t
CR
t
ACH
Aa
1
t
t
CES
ACH
Aa
t
1
AVD
t
CES
2
t
AVD
t
OE
Am29BDS128H/Am29BDS640H
2
4 cycles for initial access shown.
3
t
t
ACC
OE
D A T A
7 cycles for initial access shown.
t
t
ACC
IACC
t
IACC
3
4
t
RACC
S H E E T
5
4
Da
6
5
t
BDH
t
RACC
t
RDYS
Da + 1
7
t
Da
BACC
t
BDH
t
RDYS
Da + 1
t
t
CEZ
t
OEZ
Da + n
BACC
27024B3 May 10, 2006
t
Da + n
t
CEZ
OEZ
Hi-Z
Hi-Z
Hi-Z
Hi-Z