AM29BDS128HD8VFI AMD [Advanced Micro Devices], AM29BDS128HD8VFI Datasheet - Page 74
AM29BDS128HD8VFI
Manufacturer Part Number
AM29BDS128HD8VFI
Description
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
1.AM29BDS128HD8VFI.pdf
(89 pages)
- Current page: 74 of 89
- Download datasheet (2Mb)
AC CHARACTERISTICS
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. Amax–A12 are don’t care during command sequence unlock cycles.
4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK.
5. Either CE# or AVD# is required to go from low to high in between programming command sequences.
6. The Synchronous programming operation is dependent of the Set Device Read Mode bit in the Configuration Register. The
72
Configuration Register must be set to the Synchronous Read Mode.
Addresses
AVD#
CLK
CE#f
WE#
Data
V
OE#
CC
f
t
ACS
Figure 36. Synchronous Program Operation Timings: WE# Latched Addresses
555h
t
VCS
t
CAS
t
CSW
t
WP
t
AVCH
Program Command Sequence (last two cycles)
t
AVDP
t
A0h
ACH
Am29BDS128H/Am29BDS640H
t
WC
D A T A
t
WPH
PA
S H E E T
t
t
DH
DS
PD
t
CH
VA
t
WHWH1
Progress
Read Status Data
In
27024B3 May 10, 2006
VA
Complete
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