AM29BDS128HD8VFI AMD [Advanced Micro Devices], AM29BDS128HD8VFI Datasheet - Page 82

• Manufacturer Part Number: AM29BDS128HD8VFI
• Description: 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

AC CHARACTERISTICS)
Notes:
1. RDY active with data (A18 = 0 in the Configuration Register).
2. RDY active one clock cycle before data (A18 = 1 in the Configuration Register).
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device not crossing
4. If the starting address latched in is either 3Eh or 3Fh (or some 64 multiple of either), there is no additional 2 cycle latency at
80
Address (hex)
a bank in the process of performing an erase or program.
the boundary crossing.
RDY(1)
RDY(2)
AVD#
Data
CLK
(stays high)
3C
C60
D60
00003Fh: 00007Fh, 0000BFh, etc.) Address 000000h is also a boundary crossing.
3D
C61
Figure 46. Latency with Boundary Crossing
Address boundary occurs every 64 words, beginning at address
D61
3E
C62
Am29BDS128H/Am29BDS640H
t
RACC
D62
D A T A
C63
latency
3F
t
RACC
S H E E T
latency
C63
3F
t
RACC
D63
C63
3F
t
RACC
C64
40
D64
C65
41
D65
27024B3 May 10, 2006
C66
42
D66
C67
43
D67