AM28F010-120EC AMD [Advanced Micro Devices], AM28F010-120EC Datasheet - Page 35

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AM28F010-120EC

Manufacturer Part Number
AM28F010-120EC
Description
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet

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Part Number
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Quantity
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Part Number:
AM28F010-120EC
Manufacturer:
AMD
Quantity:
20 000
REVISION SUMMARY FOR AM28F010
Revision G+1
Distinctive Characteristics:
High Performance: The fastest speed option available
is now 70 ns.
General Description:
Paragraph 2: Changed fastest speed option to 70 ns.
Product Selector Guide:
Added -70, deleted -95 and -250 speed options.
Ordering Information, Standard Products:
The -70 speed option is now listed in the example.
Valid Combinations: Added -70, deleted -95 and -250
combinations.
Operating Ranges:
V
speed options.
AC Characteristics:
Read Only Operations Characteristics: Added the -70
column and test conditions.
Deleted -95 and -250 speed options.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
CC
Supply Voltages: Added -70, deleted -95 and -250
Am28F010
AC Characteristics:
Write/Erase/Program Operations: Added the -70 col-
umn. Deleted -95 and -250 speed options. Changed
speed option in Note 2 to -70.
Switching Test Waveforms:
In the 3.0 V waveform caption, changed -95 to -70.
Revision H
Matched formatting to other current data sheets.
Revision H+1
Figure 3, Flashrite Programming Algorithm: Moved end
of arrow originating from Increment Address box so
that it points to the PLSCNT = 0 box, not the Write Pro-
gram Verify Command box. This is a correction to the
diagram on page 6-189 of the 1998 Flash Memory
Data Book.
Revision H+2
Programming In A PROM Programmer:
Deleted the paragraph “(Refer to the AUTO SELECT
paragraph in the ERASE, PROGRAM, and READ
MODE section for programming the Flash memory de-
vice in-system).”
35

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