IPB47N10S33 Infineon Technologies AG, IPB47N10S33 Datasheet

IPB47N10S33

Manufacturer Part Number

IPB47N10S33

Description

TO263

Manufacturer

Infineon Technologies AG

Datasheet

1.IPB47N10S33.pdf (8 pages)

Specifications of IPB47N10S33

Date_code

09+

Current page: 1 of 8
Download datasheet (3Mb)

Feature

• Green package (lead free)

SIPMOS     = = = = Power-Transistor

Type

IPP47N10S-33

IPB47N10S-33

IPI47N10S-33

Maximum Ratings,at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by T

Reverse diode dv/dt

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

N-Channel

Enhancement mode

1 75°C operating temperature

Avalanche rated

dv/dt rated

=47 A , V

=47A, V

=25°C

=100°C

=25°C

=0V, di/dt=200A/µs

=25V, R

=25

Package

PG-TO220-3-1 SP0002-25706

PG-TO263-3-2 SP0002-25702

PG-TO262-3-1 SP0002-25703

= 25 °C, unless otherwise specified

P-TO262-3-1

Ordering Code

http://store.iiic.cc/

jmax

Page 1

Symbol

dv/dt

D puls

j ,

tot

stg

P-TO263-3-2

Marking

N1033

IPP47N10S-33, IPB47N10S-33

-55... +175

55/175/56

Product Summary

Value

17.5

DS(on)

±20

188

400

175

P-TO220-3-1

IPI47N10S-33

2006-02-14

100

Unit

kV/µs

°C

Related parts for IPB47N10S33

Related keywords

IPB47N10S33 datasheet
IPB47N10S33 data sheet
IPB47N10S33 pdf datasheet
IPB47N10S33 component
IPB47N10S33 part
IPB47N10S33 distributor
IPB47N10S33 RoHS
IPB47N10S33 datasheet download