AM29PDL129H AMD [Advanced Micro Devices], AM29PDL129H Datasheet - Page 26

• Manufacturer Part Number: AM29PDL129H
• Description: 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO
• Manufacturer: AMD [Advanced Micro Devices]

24
Addresses
Addresses
1Ah
1Bh
1Ch
1Dh
1Eh
1Fh
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
30h
31h
32h
33h
34h
00FDh
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0004h
0000h
0009h
0000h
0005h
0000h
0004h
0000h
0018h
0001h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
Data
Data
Table 12. Device Geometry Definition
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Table 11. System Interface String
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
Am29PDL129H
N
byte
PP
PP
N
times typical
pin present)
N
pin present)
N
times typical (00h = not supported)
N
Description
Description
times typical
ms (00h = not supported)
N
N
N
N
times typical
N
µ
s (00h = not supported)
ms
µs
November 2, 2005