AM29PDL129H AMD [Advanced Micro Devices], AM29PDL129H Datasheet - Page 49

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AM29PDL129H

Manufacturer Part Number
AM29PDL129H
Description
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
Table 7. Am29PDL129H Boot Sector/Sector Block
Addresses for Protection/Unprotection
Broke table up into CE1# and CE2# versions and made
modifications to table values to reflect change.
WP# Hardware Protection
Indicated that a write protect pin that can prevent pro-
gram or erase operations in sectors SA1-133, SA1-
134, SA2-0 and SA2-1.
Table 15. Sector Protection Command Definitions
Corrected typos in the PPB status row.
Added Note 17 to PPB Program and PPB Lock Bit Set
commands.
Added Note 18 to DYB Status.
Test Conditions
Added note to Figure 10.
Table 16. Test Specifications
Added specific speed options to table.
CMOS Compatible Table
Added CE# = V
Figure 11. Input Waveforms and Measurement
Levels
Modified values to read V
Revision B+1 (August 8, 2003)
Ordering Information
Corrected typo in package marking.
Revision B+2 (December 5, 2003)
Global
Deleted the 83 speed option (85 ns t
3.6V). Replaced the 88 speed option (85 ns t
= 1.65–1.95V) with 78 (70 ns t
Distinctive Characteristics
Performance Characteristics: Under Power Consump-
tion bullet, changed active read current from 55 to 45
Trademarks
Copyright © 2000−2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
November 2, 2005
SS
to I
CC4
CC.
and I
ACC
CC5.
, V
IO
ACC
= 1.65–1.95V).
, V
IO
ACC
= 2.7–
Am29PDL129H
, V
IO
mA; changed program/erase current from 25 to 15
mA.
Connection Diagrams
Corrected signal descriptions for balls G1 and J1 on
80-ball fine-pitch BGA package (VBB080).
DC Characteristics
Changed I
mA.
Table 16,
Changed C
pF load capacitance.
AC Characteristics
Read-only Operations table: Added note for 70 pF
load capacitance.
SecSi
Region
Customer-Lockable Area: Added sector protection fig-
ure and changed figure reference in this section from
Figure 1 to Figure 3.
Table 16. Sector Protection Command Definitions
Corrected number of cycles for SecSi Protection Bit
Status, PPMLB Status, and SPMLB Status from 4 to 5
cycles. For these command sequences, inserted a
cycle before the final read cycle (RD0).
Revision B+3 (November 2, 2005)
Updated migration statement on cover page and first
page of data sheet.
This product has been retired and is not available for
designs. For new and current designs, Am29PDL129J
supersedes Am29PDL129H and is the factory-recom-
m e n d e d m i g r a t i o n p a t h . P l e a s e r e fe r t o t h e
Am29PDL129J datasheet for specifications and order-
ing information. Availability of this document is
retained for reference and historical purposes only.
Updated trademarks.
TM
(Secured Silicon) Sector Flash Memory
Test Specifications
OL
L
test conditions for V
from 70 pF to 30 pF. Added note for 70
OL
from 4.0 mA to 2.0
47

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