BG3140R Infineon Technologies AG, BG3140R Datasheet - Page 2

• Manufacturer Part Number: BG3140R
• Description: DUAL N-Channel MOSFET Tetrode
• Manufacturer: Infineon Technologies AG

Electrical Characteristics
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+ I
Gate2-source breakdown voltage
+ I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
D
G1S
G2S
DS
DS
DS
DS
G1S
G2S
= 10 µA, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 8 V, V
= 10 mA, V
= 10 mA, V
D
G1S
G2S
G2S
G1S
G2S
G1S
= 20 µA
= 0 , V
= 4 V, R
= 4 V, I
= 0 , V
G2S
G1S
= 0
= 0 , V
= 0 , V
= 0 , V
G2S
G2S
D
DS
G1
= 20 µA
= 0
= 4.5 V
DS
DS
= 70 k
= 0
= 0
= 0
2
Symbol
V
+ V
+ V
+ I
+ I
I
I
V
V
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
G1SS
G2SS
(BR)G1SS
(BR)G2SS
min.
12
6
6
-
-
-
-
-
-
Values
typ.
0.7
0.6
15
-
-
-
-
-
-
max.
Feb-27-2004
15
15
50
50
10
BG3140...
-
-
-
-
Unit
V
µA
nA
µA
mA
V