BGA622_08 INFINEON [Infineon Technologies AG], BGA622_08 Datasheet - Page 7

• Manufacturer Part Number: BGA622_08
• Description: Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
• Manufacturer: INFINEON [Infineon Technologies AG]

2.2
Table 4
Parameter
Insertion power gain
Insertion power gain (Off-State)
Input return loss (On-State)
Output return loss (On-State)
Noise figure (
Input third order intercept Point
(On-State)
Input third order intercept point
(Off-State)
Input power at 1 dB gain compression
1)
Figure 2
Data Sheet
IP
is 50
3
values depends on termination of all intermodulation frequency components. Termination used for this measurement
from 0.1 to 6 GHz
Electrical characteristics at
V
Electrical Characteristics
S-Parameter Test Circuit (loss-free microstrip test-fixture)
Z
CC
S
= 50
= 2.75 V, Frequency = 2.14 GHz, unless otherwise specified
1)
1)
Symbol
|S
|S
RL
RL
F
IIP
IIP
P
50
-1dB
21
21
in
out
3
3
|
|
2
2
150pF
2.75V
BGA622_S_Parameter_Circuit.vsd
DC,
T
A
Min.
In, 50
= 25 °C (measured according to
7
Out, 50
Typ.
13.6
-24
7
10
1.05
3
20
-13
Values
Max.
Electrical Characteristics
Unit
dB
dB
dB
dB
dB
dBm
dBm
dBm
Rev. 2.2, 2008-04-14
Figure
Note /
Test Condition
P
P
f
f
IN
IN
= 1 MHz,
= 1 MHz,
= -28 dBm
= -8 dBm
BGA622
2)