SSS7N60B Fairchild Semiconductor, SSS7N60B Datasheet
SSS7N60B
Manufacturer Part Number
SSS7N60B
Description
TO-220
Manufacturer
Fairchild Semiconductor
Specifications of SSS7N60B
Date_code
05+
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©2002 Fairchild Semiconductor Corporation
SSP7N60B/SSS7N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
SSP Series
TO-220
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 7.0A, 600V, R
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV
SSS Series
TO-220F
SSP7N60B
SSP7N60B
1.18
0.85
62.5
DS(on)
147
7.0
4.4
0.5
28
-55 to +150
= 1.2
14.7
600
420
300
7.0
5.5
30
SSS7N60B
SSS7N60B
@V
G
7.0 *
4.4 *
0.38
28 *
62.5
GS
2.6
48
--
= 10 V
(Note 6)
D
S
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
Rev. B, June 2002
mJ
mJ
°C
°C
W
V
A
A
A
V
A
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