M36L0T7050B2ZAQT NUMONYX [Numonyx B.V], M36L0T7050B2ZAQT Datasheet - Page 16

• Manufacturer Part Number: M36L0T7050B2ZAQT
• Description: 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
5
16/22
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 4: Operating and AC measurement
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 4.
Figure 4.
V
V
V
V
V
environment)
Ambient Operating Temperature
Load Capacitance (C
Output Circuit Resistors (R
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
PPF
PPF
DDF
CCP
DDQ
Supply Voltage (Factory environment)
Supply Voltage (Application
Supply Voltage
Supply Voltage
Supply Voltage
Operating and AC measurement conditions
AC Measurement I/O Waveform
Parameter
L
)
V DDQ
1
, R
0V
2
)
conditions. Designers should check that the
Flash Memories
–0.4
Min
–25
1.7
2.7
8.5
–
0 to V
V
DDQ
30
22
DDQ
V
/2
DDQ
Max
1.95
3.1
9.5
85
M36L0T7050T2, M36L0T7050B2
–
5
+0.4
V DDQ /2
AI06161
Min
–30
2.7
–
–
–
–
5
0 to V
PSRAM
V
DDQ
50
22
DDQ
/2
Max
3.1
85
–
–
–
–
Unit
°C
pF
kΩ
ns
V
V
V
V
V
V
V