HFD2N65S SEMIHOW [SemiHow Co.,Ltd.], HFD2N65S Datasheet - Page 3

• Manufacturer Part Number: HFD2N65S
• Description: 650V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
12
9
6
3
0
0
Figure 3. On Resistance Variation vs
Figure 5. Capacitance Characteristics
Figure 1. On Region Characteristics
Drain Current and Gate Voltage
1
V
V
DS
DS
, Drain-Source Voltage[V]
, Drain-Source Voltage[V]
I
D
, Drain Current[A]
V
2
GS
= 10V
V
3
GS
= 20V
* Note : T
4
J
= 25
o
C
5
12
10
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
V
V
2
SD
GS
Q
, Source-Drain Voltage [V]
, Gate-Source Voltage[V]
and Temperature
G
, Total Gate Charge [nC]
V
V
V
DS
DS
DS
= 130V
= 325V
= 520V
4
* Note : I
6
◎ SEMIHOW REV.A0,Mar 2010
D
= 1.8A
8