HFD2N65S SEMIHOW [SemiHow Co.,Ltd.], HFD2N65S Datasheet - Page 4

• Manufacturer Part Number: HFD2N65S
• Description: 650V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
-1
-100
1
0
10
0
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
-50
T
V
J
DS
, Junction Temperature [
10
vs Temperature
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
* Notes :
1
10
10
10
1. T
2. T
3. Single Pulse
-1
-2
0
10
C
J
= 150
= 25
-5
0.01
0.02
0.05
o
D=0.5
C
o
DS(on)
0.1
C
0.2
50
DC
Figure 11. Transient Thermal Response Curve
100 ms
(continued)
single pulse
10 ms
10
100
10
2
-4
o
C]
1 ms
* Note :
t
1. V
1
2. I
, Square Wave Pulse Duration [sec]
D
GS
= 250 µA
100 µs
150
= 0 V
10
-3
200
10
3
10
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
-100
25
* Notes :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
P
1. Z
2. Duty Factor, D=t
3. T
10
DM
-1
θJC
JM
(t) = 2.87
- T
-50
C
50
= P
DM
t
T
1
o
J
T
C/W Max.
* Z
, Junction Temperature [
t
10
C
2
vs Temperature
vs Case Temperature
, Case Temperature [
0
1
/t
θJC
0
2
(t)
75
50
10
100
1
100
o
C]
o
C]
◎ SEMIHOW REV.A0,Mar 2010
125
∗ Note :
1. V
2. I
150
D
GS
= 0.9 A
= 10 V
200
150