HFD5N60S SEMIHOW [SemiHow Co.,Ltd.], HFD5N60S Datasheet - Page 3

• Manufacturer Part Number: HFD5N60S
• Description: 600V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
1000
800
600
400
200
0
6
5
4
3
2
1
0
10
0
-1
Figure 3. On Resistance Variation vs
Figure 5. Capacitance Characteristics
Figure 1. On Region Characteristics
Drain Current and Gate Voltage
2
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
4
C
C
C
rss
iss
oss
V
6
GS
= 10V
C
C
C
iss
oss
rss
= C
= C
= C
10
* Note : T
gs
gd
V
ds
1
+ C
GS
+ C
8
= 20V
gd
* Note ;
gd
1. V
2. f = 1 MHz
(C
J
ds
= 25
GS
= shorted)
= 0 V
o
C
10
10
10
10
10
10
10
12
10
-1
-1
8
6
4
2
0
1
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
0.4
2
25
4
o
V
V
Q
150
C
SD
GS
150
V
G
and Temperature
DS
, Total Gate Charge [nC]
o
0.6
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
C
4
o
V
C
= 480V
DS
V
= 300V
DS
25
= 120V
o
C
0.8
6
6
-55
o
C
1.0
8
* Note
* Note :
1. V
2. 250µs Pulse Test
1. V
2. 250µs Pulse Test
◎ SEMIHOW REV.A0,Sep 2009
8
DS
GS
= 50V
= 0V
* Note : I
1.2
10
D
= 4.5A
1.4
12
10