HFD5N60S SEMIHOW [SemiHow Co.,Ltd.], HFD5N60S Datasheet - Page 4

• Manufacturer Part Number: HFD5N60S
• Description: 600V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
-100
-1
1
0
10
-1
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
-50
10
T
0
V
J
DS
, Junction Temperature [
vs Temperature
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
* Notes :
10
10
10
1. T
2. T
3. Single Pulse
-1
-2
0
10
C
J
= 150
= 25
-5
0.01
0.02
0.05
D=0.5
o
C
DS(on)
o
0.1
10
0.2
50
C
1
Figure 11. Transient Thermal Response Curve
(continued)
DC
10
100
single pulse
100 ms
-4
o
C]
10 ms
* Note :
10
t
1. V
2. I
1
2
, Square Wave Pulse Duration [sec]
D
1 ms
GS
= 250 µA
150
= 0 V
100 µs
10
-3
200
10
3
10
-2
2.5
2.0
1.5
1.0
0.5
0.0
-100
5
4
3
2
1
0
25
* Notes :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
P
1. Z
2. Duty Factor, D=t
3. T
10
DM
-1
θJC
JM
(t) = 1.37
- T
-50
C
50
= P
DM
t
T
1
o
J
T
10
C/W Max.
* Z
, Junction Temperature [
t
C
2
vs Temperature
vs Case Temperature
0
, Case Temperature [
1
0
/t
θJC
2
(t)
75
50
10
100
1
100
o
C]
o
C]
◎ SEMIHOW REV.A0,Sep 2009
125
* Note :
1. V
2. I
150
D
GS
= 2.15 A
= 10 V
200
150