BSP123_10 INFINEON [Infineon Technologies AG], BSP123_10 Datasheet

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SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Pb-free lead plating; RoHS compliant • • Qualified according to AEC Q101 Type Package PG-SOT223 BSP123 PG-SOT223 BSP123 Maximum Ratings Parameter Continuous drain current =25° ...

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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area 1) Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage =0, I =250µA ...

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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance C Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total ...

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Power dissipation = tot A BSP123 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area = parameter ...

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Typ. output characteristic = parameter ° 0.7 10V A 5V 4.5V 0.6 4.1V 3.9V 0.55 3.7V 0.5 3.5V 3.1V 0.45 2.9V 0.4 2.3V 0.35 0.3 0.25 0.2 ...

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Drain-source on-state resistance = DS(on) j parameter : BSP123 98 typ 2 0 -60 - Typ. ...

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Typ. gate charge = parameter 0.37 A pulsed BSP123 0 max 0 max 6 0 max 4 ...

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Package Oultline: PG-SOT223 Footprint: Dimensions in mm Rev. 1.5 Page 8 BSP123 2010-06-22 ...

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Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...