BSP170P_09 INFINEON [Infineon Technologies AG], BSP170P_09 Datasheet
BSP170P_09
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BSP170P_09 Summary of contents
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SIPMOS ® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead finishing; RoHS compliant Type Package BSP 170 P PG-SOT-223 Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous ...
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Parameter Thermal characteristics Thermal resistance, junction -soldering point SMD version, device on PCB: Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Transconductance 1) Device on ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 1.8 1.5 1.2 0.9 0.6 0 Safe operating area =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter - -6V - Typ. transfer characteristics I ...
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Drain-source on-state resistance R =f =-1 DS(on 600 550 500 450 400 98 % 350 300 250 200 150 100 50 0 -60 - Typ. capacitances C =f(V ); ...
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Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS ...
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Package Outline SOT-223: Outline Footprint Operating and storage temperature Dimensions in mm Rev 2.52 Packaging Tape page 8 BSP 170 P 2009-02-16 ...
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Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...