BSP295_07 INFINEON [Infineon Technologies AG], BSP295_07 Datasheet - Page 6
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BSP295_07
Manufacturer Part Number
BSP295_07
Description
SIPMOS Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
1.BSP295_07.pdf
(8 pages)
9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
0.75
0.55
0.45
0.35
0.25
0.15
0.05
10
10
10
pF
0.6
0.5
0.4
0.3
0.2
0.1
0
-60
3
2
1
0
BSP295
DS
= f (T
)
-20
5
D
GS
j
)
= 1.8 A, V
=0, f=1 MHz, T
20
10
98%
typ
Crss
Coss
Ciss
60
15
GS
= 10 V
100
20
j
= 25 °C
°C
V
T
V
j
DS
180
30
Page 6
Rev 1.3
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
10
10
10
10
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
V
A
-1
-2
1
0
-60
1
0
0
BSP295
= f (T j )
SD
)
0.4
-20
GS
0.8
= V
20
DS ;
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
2%
98%
I
typ.
D
1.6
60
= 1 mA
2
100
2007-02-07
2.4
BSP295
°C
T
V
V
j
SD
160
3