BSP300_08 INFINEON [Infineon Technologies AG], BSP300_08 Datasheet
BSP300_08
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BSP300_08 Summary of contents
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SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • 2.0... 4.0 V GS(th) Pb-free lead plating; RoHS compliant • • Qualified according to AEC Q101 V Type DS BSP300 800 V Type RoHS ...
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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 0. DS(on)max, D Input capacitance = MHz ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage 0. ...
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Power dissipation = ƒ tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area = ƒ parameter ...
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Typ. output characteristics = ƒ parameter µ ° 0. tot 0.35 D ...
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Drain-source on-resistance = ƒ (on) j parameter 0. Ω (on 98 typ -60 -20 20 ...
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Avalanche energy E AS parameter 0 Ω 105 ...
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Rev 2.0 Page 9 BSP300 2008-03-26 ...