BSP50_07 INFINEON [Infineon Technologies AG], BSP50_07 Datasheet
BSP50_07
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BSP50_07 Summary of contents
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NPN Silicon Darlington Transistors High collector current Low collector-emitter saturation voltage Complementary types: BSP60 - BSP52 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BSP50 BSP50 BSP51 BSP51 BSP52 BSP52 Maximum Ratings Parameter Collector-emitter voltage BSP50 BSP51 ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BSP50 mA BSP51 C B ...
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Electrical Characteristics at T Parameter AC Characteristics Transition frequency I = 100 mA 100 MHz C CE Tum-on time I = 500 mA 0 Tum-off time ...
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... Switching time test circuit Switching time waveform 4 BSP50-BSP52 2007-03-30 ...
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DC current gain BSP 50... Base-emitter saturation voltage ...
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Collector-base capacitance C Emitter-base capacitance CEB Permissible Pulse Load totmax totDC p BSP 50...52 3 ...
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Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...
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Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...