HY5DU281622DLT HYNIX [Hynix Semiconductor], HY5DU281622DLT Datasheet - Page 23

• Manufacturer Part Number: HY5DU281622DLT
• Description: 128Mb-S DDR SDRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
Note :
1. V
2. V
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
DC CHARACTERISTICS I
Note : 1. VIN = 0 to 2.7V, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to 2.7V
Rev. 0.0 / Apr. 2003
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
Voltage on V
Voltage on V
Output Short Circuit Current
Power Dissipation
Soldering Temperature Þ Time
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Peak to peak noise on VREF may not exceed +/- 2% of the DC value.
DDQ
IL
(min) is acceptable -1.5V AC pulse width with < 5ns of duration.
must not exceed the level of V
Parameter
Parameter
DD
DDQ
Parameter
relative to V
relative to V
SS
SS
SS
Symbol
Symbol
(TA=0 to 70
DD
V
V
V
V
V
V
V
I
V
DDQ
I
REF
DD
LO
OH
OL
IH
TT
LI
IL
.
(TA=0 to 70
o
C, Voltage referenced to V
V
0.49*VDDQ
V
V
Symbol
REF
REF
T
IN
V
SOLDER
V
T
Min
TT
V
-0.3
, V
I
2.5
2.5
DDQ
T
P
STG
OS
Min.
DD
+ 0.15
o
- 0.04
A
D
C, Voltage referenced to V
+ 0.76
-2
-5
OUT
-
0.5*VDDQ
Typ.
V
2.6
2.6
REF
-
-
V
TT
SS
Max
- 0.76
= 0V)
2
5
-
V
V
0.51*VDDQ
V
SS
-0.5 ~ 3.6
-0.5 ~ 3.6
-0.5 ~ 3.6
-55 ~ 125
REF
260 Þ 10
DDQ
Rating
REF
0 ~ 70
Max
= 0V)
2.7
2.7
50
1
+ 0.04
- 0.15
+ 0.3
Unit
uA
uA
HY5DU28422D(L)T
HY5DU28822D(L)T
HY5DU281622D(L)T
V
V
Unit
V
V
V
V
V
V
I
I
OH
OL
o
C Þ sec
Unit
= +15.2mA
= -15.2mA
mA
o
o
W
Note
V
V
V
C
C
Note
1
2
1
2
3
23