EN29LV800 EON [Eon Silicon Solution Inc.], EN29LV800 Datasheet - Page 10

• Manufacturer Part Number: EN29LV800
• Description: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the
following hardware data protection measures prevent accidental erasure or programming, which
might otherwise be caused by false system level signals during Vcc power up and power down
transitions, or from system noise.
Low V
When Vcc is less than V
Vcc power up and power down. The command register and all internal program/erase circuits are
disabled, and the device resets. Subsequent writes are ignored until Vcc is greater than V
system must provide the proper signals to the control pins to prevent unintentional writes when Vcc is
greater than V
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on OE , CE or
Logical Inhibit
Write cycles are inhibited by holding any one of OE = VIL, CE = VIH, or
write cycle, CE and
are all logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with CE = V
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W E
.
CC
Write Inhibit
IL
, W E = V
LKO
.
W E
IL
LKO
and OE = V
must be a logical zero while OE is a logical one. If CE ,
, the device does not accept any write cycles. This protects data during
Rev 0.4 Release Date: 2002/01/29
IH
, the device will not accept commands on the rising edge of
10
W E
do not initiate a write cycle.
W E
= VIH. To initiate a
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W E
, and OE
LKO
. The