EN29LV800 EON [Eon Silicon Solution Inc.], EN29LV800 Datasheet - Page 31

• Manufacturer Part Number: EN29LV800
• Description: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Parameter Description
Chip Programming
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Table 12. LATCH UP CHARACTERISTICS
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 14. 32-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Table 15. DATA RETENTION
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Erase/Program Endurance
Parameter Symbol
Word Programming Time
Byte Programming Time
Input voltage with respect to V
Sector Erase Time
Chip Erase Time
Minimum Pattern Data Retention Time
Time
Input voltage with respect to V
C
C
Parameter
C
OUT
IN2
IN
Parameter Description
(including A9, Reset and OE )
Word
Byte
Vcc Current
Control Pin Capacitance
Parameter Description
Output Capacitance
Input Capacitance
ss
on all pins except I/O pins
100K
Typ
0.5
6.2
3.1
8
8
8
Rev 0.4 Release Date: 2002/01/29
ss
on all I/O Pins
Limits
Max
200
200
18
2
9
31
Test Conditions
Test Setup
V
V
V
OUT
150°C
125°C
IN
IN
cycles
= 0
= 0
Unit
sec
sec
sec
= 0
µs
µs
-100 mA
-1.0 V
-1.0 V
Min
Excludes 00H programming prior
Excludes system level overhead
Typ
8.5
7.5
6
Minimum 100K cycles
Min
10
20
(preliminary)
Comments
to erasure
EN29LV800
Max
7.5
12
Tel: [phone]
Fax: [phone]
9
Vcc + 1.0 V
100 mA
12.0 V
Max
Years
Years
Unit
Unit
pF
pF
pF