BSP316PE6327NT Infineon, BSP316PE6327NT Datasheet
BSP316PE6327NT
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BSP316PE6327NT Summary of contents
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SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Type Package BSP 316 P P-SOT223-4-1 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current T =25°C A Reverse diode dv/dt ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot BSP 316 P 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area ...
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Typ. output characteristic parameter =25° 2.4 A 10V 5V 4.4V 2 3.6V 3.2V 1.8 2.8V 2.4V 1.6 2.2V 1.4 1.2 1 0.8 0.6 0.4 0 0.5 ...
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Drain-source on-state resistance DS(on) j parameter : I = -0. BSP 316 3.5 3 2.5 98% 2 1.5 typ 1 0.5 0 -60 - Typ. ...
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Typ. gate charge Gate parameter -0.68 A pulsed BSP 316 P -16 V - max 0 max -2 0.8 V ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...