BSP316PE6327NT Infineon, BSP316PE6327NT Datasheet - Page 6

• Manufacturer Part Number: BSP316PE6327NT
• Manufacturer: Infineon

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
Rev.1.1
10
10
10
10
3.5
2.5
1.5
0.5
5
4
3
2
1
0
-60
3
2
1
0
0
BSP 316 P
DS
= f (T
)
4
-20
D
GS
j
)
8
= -0.68 A, V
=0, f=1 MHz, T j = 25 °C
20
12
98%
16
typ
60
20
GS
C
C
C
100
oss
24
iss
rss
= -10 V
28
°C
V
T
-V
j
DS
180
36
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
-10
-10
-10
-10
2.4
V
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
2
1
0
-60
1
0
0
= f (T j )
SD
BSP 316 P
)
-0.4
-20
GS
-0.8
= V
20
DS
-1.2
T
T
T
T
j
j
j
j
98%
typ.
2%
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
-1.6
60
-2
100
2002-07-24
BSP 316 P
-2.4
°C
T
V
V
j
SD
160
-3