SN7002NE6327XT Infineon, SN7002NE6327XT Datasheet
SN7002NE6327XT
Related parts for SN7002NE6327XT
SN7002NE6327XT Summary of contents
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SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Qualified according to AEC Q101 Type Package PG-SOT-23 SN7002N SN7002N PG-SOT-23 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current T ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =250µ Gate threshold voltage =26µA D Zero gate voltage drain ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance C Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total ...
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Power dissipation tot A SN7002N 0.38 W 0.32 0.28 0.24 0.2 0.16 0.12 0.08 0. Safe operating area parameter ...
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Typ. output characteristic parameter ° 10V 4.5V 0.75 4.0V 3.7V 0.625 3.5V 3.0V 0.5 0.375 0.25 0.125 0 0 0.5 1 ...
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Drain-source on-state resistance DS(on) j parameter : SN7002N 98 typ -60 -20 20 ...
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Typ. gate charge parameter 0.2 A pulsed SN7002N 0 max 0 max 8 0 max 6 4 ...
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Package Outline: Footprint: Dimensions in mm Rev 2.5 SOT23 Packaging: page 8 SN7002N 2009-14-08 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...