SN7002NE6327XT Infineon, SN7002NE6327XT Datasheet - Page 3

• Manufacturer Part Number: SN7002NE6327XT
• Manufacturer: Infineon

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsedI
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Rev. 2.5
Symbol
g
C
C
t
t
t
t
I
t
Q
Q
Q
Q
V
j
d(on)
r
d(off)
f
S
SM
rr
= 25 °C, unless otherwise specified
fs
SD
(plateau) V
iss
oss
rss
rr
gs
gd
g
Page 3
V
I
V
f=1MHz
V
I
T
V
V
di
V
V
V
D
D
A
DS
GS
DD
GS
R
DD
DD
GS
DD
F
=0.16A
=0.5A, R
=25°C
=30V, I
/dt=100A/µs
=0, V
=30V, V
=0, I
=48V, I
=48V, I
=0 to 10V
=48V, I
2*I
Conditions
D
F
*R
DS
F =
= I S
G
D
D
D
DS(on)max
GS
=6
=25V,
l
S
=0.5A
=0.5A,
= 0.5 A
,
=10V,
,
min.
0.09
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.17
0.83
14.2
typ.
0.14
0.42
7.2
2.8
2.4
3.2
5.3
3.6
5.9
4.5
34
1
-
-
2009-14-08
max.
SN7002N
21.3
0.21 nC
0.63
9.6
4.2
3.6
4.8
5.4
0.2
0.8
1.2
8.8
45
1.5
8
-
-
Unit
S
pF
ns
A
V
ns
nC
V