MAX11014BGTM+ Maxim Integrated, MAX11014BGTM+ Datasheet - Page 33

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MAX11014BGTM+

Manufacturer Part Number
MAX11014BGTM+
Description
Special Purpose Amplifiers Auto RF MESFET Amp Drain-Current Cntrlr
Manufacturer
Maxim Integrated
Series
MAX11014, MAX11015r
Datasheet

Specifications of MAX11014BGTM+

Rohs
yes
Common Mode Rejection Ratio (min)
90 dB
Operating Supply Voltage
0.5 V to 11 V
Supply Current
2.8 mA
Maximum Power Dissipation
2162.2 mW
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TQFN-48
Available Set Gain
13.98 dB
change to normal power mode, write two commands to
the shutdown register. Set the FULLPD bit to 0 (other
bits in the shutdown register are ignored) on the first
command. A second command to this register acti-
vates the internal blocks.
Set the external channel 1 and channel 2 high tempera-
ture ALARM thresholds by writing command bytes 20h
and 2Ch, respectively. Following the command byte,
write 12 bits of data to bits D11–D0. Read the high tem-
perature channel 1 and channel 2 ALARM thresholds
by writing command bytes A0h and ACh, respectively.
Following the command byte, read 12 bits of data from
bits D11–D0. Bits D15–D12 are don’t care. Temper-
ature data must be written and read in two’s-comple-
ment format, with the LSB corresponding to +0.125°C.
See Table 3. The POR value of the high temperature
ALARM threshold registers is 0111 1111 1111, which
corresponds to +255.875°C. See Table 4 for examples
of channel 1/channel 2 high and low temperature
threshold settings. See Figures 25 and 27 for ALARM
examples.
Table 3. TH1 and TH2 (Read/Write)
X = Don’t care.
Table 4. High/Low Temperature ALARM Threshold Examples
Table 5. TL1 and TL2 (Read/Write)
X = Don’t care.
RESET
STATE
BIT VALUE
(°C)
RESET
STATE
BIT VALUE
(°C)
TEMPERATURE
BIT
BIT
+27.125°C
SETTING
-1.625°C
+105°C
-40°C
0°C
D15
D15
X
X
X
X
______________________________________________________________________________________
D14
D14
X
X
X
X
D13
D13
X
X
X
X
TH1 and TH2 (Read/Write)
(TWO’S COMPLEMENT)
DATA BITS D11–D0
1110 1100 0000
1111 1111 0011
0000 0000 0000
0000 1101 1001
0011 0100 1000
D12
D12
X
X
X
X
Automatic RF MESFET Amplifier
(sign)
(sign)
MSB
MSB
D11
D11
0
1
D10
D10
128
128
1
0
D9
D9
64
64
1
0
Drain-Current Controllers
D8
32
D8
32
1
0
Set the external channel 1 and channel 2 low tempera-
ture ALARM thresholds by writing command bytes 22h
and 2Eh, respectively. Following the command byte,
write 12 bits of data to bits D11–D0. Read the low tem-
perature channel 1 and channel 2 ALARM thresholds
by writing command bytes A2h and AEh, respectively.
Following the command byte, read 12 bits of data from
bits D11–D0. Bits D15–D12 are don’t care. Temper-
ature data must be written and read in two’s-comple-
ment format, with the LSB corresponding to +0.125°C.
See Table 5. The POR value of the low temperature
ALARM threshold registers is 1000 0000 0000, which
corresponds to -256.0°C. See Figures 25 and 27 for
ALARM examples.
Set the channel 1 and channel 2 high sense voltage
ALARM thresholds by writing command bytes 24h and
30h, respectively. Following the command byte, write
12 bits of data to bits D11–D0. Read the high sense
voltage channel 1 and channel 2 ALARM thresholds by
writing command bytes A4h and B0h, respectively.
D7
16
D7
16
1
0
D6
D6
1
8
0
8
D5
D5
1
4
0
4
D4
D4
1
2
0
2
TL1 and TL2 (Read/Write)
IH1 and IH2 (Read/Write)
D3
D3
1
1
0
1
D2
0.5
D2
0.5
1
0
0.25
0.25
D1
D1
1
0
0.125
0.125
LSB
LSB
D0
D0
1
0
33

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