MAX11014BGTM+ Maxim Integrated, MAX11014BGTM+ Datasheet - Page 34

• Manufacturer Part Number: MAX11014BGTM+
• Description: Special Purpose Amplifiers Auto RF MESFET Amp Drain-Current Cntrlr
• Manufacturer: Maxim Integrated
• Series: MAX11014, MAX11015r

Specifications of MAX11014BGTM+

• Rohs: yes
• Common Mode Rejection Ratio (min): 90 dB
• Operating Supply Voltage: 0.5 V to 11 V
• Supply Current: 2.8 mA
• Maximum Power Dissipation: 2162.2 mW
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TQFN-48
• Available Set Gain: 13.98 dB

Following the command byte, read 12 bits of data from
bits D11–D0. Bits D15–D12 are don’t care. Sense volt-
age data must be written and read in straight binary
format. See Table 6. The POR value of the high sense
voltage ALARM threshold registers is 1111 1111 1111.
See Figures 25 and 27 for ALARM examples.
The sense voltage is measured between RCS_+ and
RCS_-. A reading of 1111 1111 1111 corresponds to
V
sponds to 0mV.
Set the channel 1 and channel 2 low sense voltage
ALARM thresholds by writing command bytes 26h and
32h, respectively. Following the command byte, write
12 bits of data to bits D11–D0. Read the low sense volt-
age channel 1 and channel 2 ALARM thresholds by
writing command bytes A6h and B2h, respectively.
Following the command byte, read 12 bits of data from
bits D11–D0. Bits D15–D12 are don’t care. Sense volt-
age data must be written and read in straight binary
format. See Table 7. The POR value of the low sense
voltage ALARM threshold registers is 0000 0000 0000.
See Figures 25 and 27 for ALARM examples.
The sense voltage is measured between RCS_+ and
RCS_-. A reading of 1111 1111 1111 corresponds to
V
sponds to 0mV.
Automatic RF MESFET Amplifier
Drain-Current Controllers
Table 6. IH1 and IH2 (Read/Write)
X = Don’t care.
Table 7. IL1 and IL2 (Read/Write)
X = Don’t care.
Table 8. VH1 and VH2 (Read/Write)
X = Don’t care.
34
RESET
STATE
BIT VALUE
RESET
STATE
BIT VALUE
RESET
STATE
BIT VALUE
REFDAC
REFDAC
BIT
BIT
BIT
______________________________________________________________________________________
/ 4. A reading of 0000 0000 0000 corre-
/ 4. A reading of 0000 0000 0000 corre-
D15
D15
D15
X
X
X
X
X
X
D14
D14
D14
X
X
X
X
X
X
D13
D13
D13
X
X
X
X
X
X
IL1 and IL2 (Read/Write)
D12
D12
D12
X
X
X
X
X
X
MSB
MSB
MSB
D11
D11
D11
1
0
1
D10
D10
D10
—
—
—
1
0
1
D9
D9
D9
—
—
—
1
0
1
D8
D8
D8
—
—
—
1
0
1
Set the channel 1 and channel 2 high GATE voltage
ALARM thresholds by writing command bytes 28h and
34h, respectively. Following the command byte, write
12 bits of data to bits D11–D0. Read the high GATE
voltage channel 1 and channel 2 ALARM thresholds by
writing command bytes A8h and B4h, respectively.
Following the command byte, read 12 bits of data from
bits D11–D0. Bits D15–D12 are don’t care. Voltage data
must be written and read in straight binary format. See
Table 8. The POR value of the high GATE voltage
ALARM threshold registers is 1111 1111 1111. See
Figure 7 for a GATE voltage example. See Figures 25
and 27 for ALARM examples.
Set the channel 1 and channel 2 low GATE voltage
ALARM thresholds by writing command bytes 2Ah and
36h, respectively. Following the command byte, write
12 bits of data to bits D11–D0. Read the low GATE volt-
age channel 1 and channel 2 ALARM thresholds by
writing command bytes AAh and B6h, respectively.
Following the command byte, read 12 bits of data from
bits D11–D0. Bits D15–D12 are don’t care. Voltage data
must be written and read in straight binary format. See
Table 9. The POR value of the low GATE voltage
ALARM threshold registers is 0000 0000 0000. See
Figure 7 for a GATE voltage example. See Figures 25
and 27 for ALARM examples.
D7
D7
D7
—
—
—
1
0
1
D6
D6
D6
—
—
—
1
0
1
D5
D5
D5
—
—
—
1
0
1
D4
D4
D4
—
—
—
1
0
1
VH1 and VH2 (Read/Write)
VL1 and VL2 (Read/Write)
D3
D3
D3
—
—
—
1
0
1
D2
D2
D2
—
—
—
1
0
1
D1
D1
D1
—
—
—
1
0
1
LSB
LSB
LSB
D0
D0
D0
1
0
1