NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 28

IC FLASH 4GBIT 48TSOP

NAND04GW3B2DN6E

Manufacturer Part Number
NAND04GW3B2DN6E
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND04GW3B2DN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Device operations
6.4
28/72
Multiplane page program
The devices support multiplane page program, which enables the programming of two
pages in parallel, one in each plane.
A multiplane page program operation requires the following two steps:
1.
2.
As for standard page program operation, the device supports random data input during both
data loading phases.
Once the multiplane page program operation has started, that is during a delay of t
status register can be read using the Read Status Register command.
Once the multiplane page program operation has completed, the P/E/R controller bit SR6 is
set to ‘1’ and the Ready/Busy signal goes High.
If the multiplane page program fails, an error is signaled on bit SR0 of the status register. To
know which page of the two planes failed, the Read Status Enhanced command must be
issued twice, once for each plane (see
Figure 13
related to the multiplane page program and the differences between ONFI 1.0 and
traditional sequences.
The first step serially loads up to two pages of data (4224 bytes) into the data buffer. It
requires:
Parallel programming of both pages starts after the issue of Page Confirm command.
Refer to
and traditional sequences.
1 clock cycle to set up the Page Program command (see
input)
5 bus write cycles to input the first page address and data. The address of the first
page must be within the first plane (A18 = 0 for x8 devices, A17 = 0 for x16
devices)
1 bus write cycle to issue the page program confirm code. After this, the device is
busy for a time of t
When the device returns to the ready state (Ready/Busy High), a multiplane page
program setup code must be issued, followed by the 2nd page address (5 write
cycles) and data. The address of the 2nd page must be within the second plane
(A18 = 1 for x8 devices, A17 = 1 for x16 devices)
provides a description of the multiplane operation while showing the restrictions
Figure 13: Multiplane page program waveform
IPBSY.
Section
6.12).
NAND04G-B2D, NAND08G-BxC
for differences between ONFI
Section 6.3.1: Sequential
IPBSY
, the

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