NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 51

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND04G-B2D, NAND08G-BxC
12
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the devices. The parameters in the following DC and AC characteristics
tables are derived from tests performed under the measurement conditions summarized in
Table
measurement conditions when relying on the quoted parameters.
Table 26.
Table 27.
1. T
2. Input/output capacitances double in stacked devices.
Supply voltage (V
Ambient temperature (T
Load capacitance (C
and C
Input pulses voltages
Input and output timing ref. voltages
Output circuit resistor R
Input rise and fall times
Symbol
C
C
A
I/O
IN
= 25 °C, f = 1 MHz. C
26. Designers should check that the operating conditions in their circuit match the
L
)
Input capacitance
Input/output
capacitance
Operating and AC measurement conditions
Capacitance
DD
Parameter
)
L
) (1 TTL GATE
A
ref
)
IN
(2)
Parameter
and C
(1)
I/O
are not 100% tested.
Test condition
V
V
1.8 V device
1.8 V device
IN
3 V device
3 V device
IL
Grade 1
Grade 6
= 0 V
= 0 V
Typ
Min
–40
1.7
2.7
30
50
0
0
NAND flash
V
DC and AC parameters
8.35
DD
5
/2
Max
Max
1.95
10
10
V
3.6
70
85
DD
Units
Unit
kΩ
pF
pF
°C
pF
ns
V
V
V
51/72