NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 49

• Manufacturer Part Number: NAND04GW3B2DN6E
• Description: IC FLASH 4GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND04GW3B2DN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 4G (512M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND04G-B2D, NAND08G-BxC
10
Table 24.
Page program time
Multiplane program time
Block erase time
Multiplane block erase time
Multiplane program busy time (t
Multiplane erase busy time (t
Cache read busy time (t
Program/erase cycles per block (with ECC)
Data retention
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Program erase times and program erase endurance cycles
Table
24.
Parameters
RCBSY
IEBSY
)
IPBSY
)
)
1.8 V
1.8 V
3 V
3 V
Program and erase times and endurance cycles
100,000
Min
10
NAND flash
Typ
200
200
250
1.5
1.5
0.5
0.5
2
3
Max
700
700
800
2.5
t
2
2
1
1
R
cycles
years
Unit
ms
ms
ms
µs
µs
µs
µs
µs
µs
49/72