NAND04GW3B2DN6E NUMONYX, NAND04GW3B2DN6E Datasheet - Page 62

IC FLASH 4GBIT 48TSOP

NAND04GW3B2DN6E

Manufacturer Part Number
NAND04GW3B2DN6E
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND04GW3B2DN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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DC and AC parameters
Figure 35. Block erase AC waveform
Figure 36. Reset AC waveform
62/72
RB
I/O
CL
W
AL
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
cycle 3
Add.
tWHBL
(Reset Busy time)
tBLBH4
Confirm
Code
D0h
Block Erase
(Erase Busy time)
tBLBH3
NAND04G-B2D, NAND08G-BxC
70h
Read Status Register
tWHRL
SR0
ai08038c
ai08043

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