CY7C1512AV18-200BZXC Cypress Semiconductor Corp, CY7C1512AV18-200BZXC Datasheet - Page 11
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CY7C1512AV18-200BZXC
Manufacturer Part Number
CY7C1512AV18-200BZXC
Description
IC SRAM 72MBIT 200MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheets
1.CY7C1514AV18-167BZXC.pdf
(28 pages)
2.CY7C1512AV18-200BZXC.pdf
(26 pages)
3.CY7C1512AV18-200BZXC.pdf
(24 pages)
4.CY7C1514AV18-200BZXI.pdf
(28 pages)
Specifications of CY7C1512AV18-200BZXC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (4M x 18)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1512AV18-200BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1512AV18-200BZXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Document #: 38-05565 Rev. *E
Write Cycle Descriptions
Write Cycle Descriptions
BWS
BWS
H
H
H
H
H
H
H
H
L
L
L
L
H
H
L
L
0
0
BWS
L-H
L-H
H
H
H
H
H
H
H
H
L
L
L
L
K
–
–
1
BWS
L-H
L-H
H
H
H
H
H
H
H
H
L
L
L
L
K
–
–
2
BWS
During the Data portion of a Write sequence, the single byte (D
During the Data portion of a Write sequence, the single byte (D
No data is written into the device during this portion of a Write operation.
No data is written into the device during this portion of a Write operation.
H
H
H
H
H
H
H
H
L
L
L
L
3
L-H
–
L-H
–
L-H
–
L-H
–
L-H
–
L-H
–
(CY7C1519V18)
(CY7C1521V18)
K
–
L-H
–
L-H
–
L-H
–
L-H
L-H
–
L-H
K
During the Data portion of a Write sequence, all four bytes (D
into the device.
During the Data portion of a Write sequence, all four bytes (D
into the device.
During the Data portion of a Write sequence, only the lower byte (D
into the device. D
During the Data portion of a Write sequence, only the lower byte (D
into the device. D
During the Data portion of a Write sequence, only the byte (D
the device. D
During the Data portion of a Write sequence, only the byte (D
the device. D
During the Data portion of a Write sequence, only the byte (D
into the device. D
During the Data portion of a Write sequence, only the byte (D
into the device. D
During the Data portion of a Write sequence, only the byte (D
into the device. D
During the Data portion of a Write sequence, only the byte (D
into the device. D
No data is written into the device during this portion of a Write operation.
No data is written into the device during this portion of a Write operation.
[3, 9]
[3, 9]
[8:0]
[8:0]
[35:9]
[35:9]
and D
and D
[17:0]
[17:0]
[26:0]
[26:0]
Comments
will remain unaltered.
will remain unaltered.
and D
and D
will remain unaltered.
will remain unaltered.
[35:18]
[35:18]
[35:27]
[35:27]
will remain unaltered.
will remain unaltered.
Comments
will remain unaltered.
will remain unaltered.
[8:0]
[8:0]
) is written into the device.
) is written into the device.
CY7C1517V18
CY7C1528V18
CY7C1519V18
CY7C1521V18
[17:9]
[17:9]
[35:0]
[35:0]
[26:18]
[26:18]
[35:27]
[35:27]
) is written into
) is written into
Page 11 of 28
[8:0]
[8:0]
) are written
) are written
) is written
) is written
) is written
) is written
) is written
) is written