CY7C1512AV18-200BZXC Cypress Semiconductor Corp, CY7C1512AV18-200BZXC Datasheet - Page 20

• Manufacturer Part Number: CY7C1512AV18-200BZXC
• Description: IC SRAM 72MBIT 200MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512AV18-200BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05565 Rev. *E
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied .. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z......... –0.5V to V
DC Input Voltage
Electrical Characteristics
DC Electrical Characteristics
V
V
V
V
V
V
V
V
I
I
V
I
I
AC Input Requirements
V
V
Notes:
16. Overshoot: V
17. Power-up: Assumes a linear ramp from 0V to V
18. All voltage referenced to ground.
19. Outputs are impedance controlled. I
20. Outputs are impedance controlled. I
21. V
Parameter
Parameter
X
OZ
DD
SB1
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
REF
(Min.) = 0.68V or 0.46V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic
Power-down
Current
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
IH
DD
(AC) < V
[16]
Operating Supply
DD
DDQ
...............................–0.5V to V
Description
Description
DD
Relative to GND........ –0.5V to +2.9V
+0.85V (Pulse width less than t
Relative to GND ...... –0.5V to +V
Over the Operating Range
DDQ
, whichever is larger, V
OH
OL
Over the Operating Range
[16]
[16]
= (V
Over the Operating Range
= –(V
DDQ
[21]
DDQ
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
DD
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
GND ≤ V
(Min.) within 200 ms. During this time V
Note 19
Note 20
I
I
GND ≤ V
Typical Value = 0.75V
V
I
f = f
Max. V
Deselected,
V
f = f
Inputs Static
OH
OL
OUT
DD
IN
= −0.1 mA, Nominal Impedance
= 0.1 mA, Nominal Impedance
MAX
MAX
≥ V
= Max.,
REF
= 0 mA,
TCYC
DDQ
DD
IH
(Max.) = 0.95V or 0.54V
DD
= 1/t
= 1/t
Test Conditions
Test Conditions
I
I
, both ports
/2); Undershoot V
or V
≤ V
≤ V
+ 0.3V
+ 0.3V
CYC
CYC
DDQ
DDQ,
IN
DD
≤ V
,
[18]
Output Disabled
IL
,
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M 3015)... > 2001V
Latch-up Current.................................................... > 200 mA
Operating Range
IL
Com’l
Ind’l
(AC) > −1.5V (Pulse width less than t
Range
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
DDQ
, whichever is smaller.
IH
< V
DD
–40°C to +85°C
V
V
Temperature
0°C to +70°C
DDQ
DDQ
V
V
and V
V
Ambient
DDQ
REF
REF
Min.
–0.3
0.68
Min.
V
1.7
1.4
/2 – 0.12
/2 – 0.12
–5
–5
DDQ
–
SS
+ 0.1
+ 0.2
– 0.2
< V
DD
.
TCYC
Typ.
Typ.
0.75
1.8
1.5
–
–
1.8 ± 0.1V
/2).
V
DD
CY7C1517V18
CY7C1528V18
CY7C1519V18
CY7C1521V18
[17]
V
V
DDQ
DDQ
V
V
V
DDQ
REF
REF
V
Max.
Max.
0.95
V
700
750
850
900
950
340
360
380
390
400
/2 + 0.12
/2 + 0.12
1.9
0.2
DDQ
DD
5
5
–
Page 20 of 28
– 0.1
– 0.2
+ 0.3
1.4V to V
V
DDQ
[17]
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
DD
V
V
V
V
V
V
V
V
V
V
V