CY7C1512AV18-200BZXC Cypress Semiconductor Corp, CY7C1512AV18-200BZXC Datasheet - Page 28

• Manufacturer Part Number: CY7C1512AV18-200BZXC
• Description: IC SRAM 72MBIT 200MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512AV18-200BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05565 Rev. *E
Document History Page
REV. ECN NO.
Document Title: CY7C1517V18/CY7C1528V18/CY7C1519V18/CY7C1521V18 72-Mbit DDR-II SRAM 4-Word Burst
Architecture
Document Number: 38-05565
*A
*B
*C
*D
*E
**
226981 See ECN
257089 See ECN
319496 See ECN
409515 See ECN
467290 See ECN
505682 See ECN
Issue
Date
Orig. of
Change
NXR
NXR
VKN
DIM
NJY
SYT
New Data Sheet
Modified ID code for the x9 option in the JTAG ID Register Definitions table on page 21
Corrected typo in the part numbers in the title; part number CY7C1519V18 changed to
CY7C1528V18,part number CY7C1521V18 changed to CY7C1519V18 and part number
CY7C1528V18 changed to CY7C1521V18
Corrected “Switching Waveforms” diagram
Included thermal values
Modified capacitance values table: included capacitance values for x8, x18 and x36 options
Removed CY7C1528V18 from the title
Included 300-MHz Speed Bin
Added footnote #1 and accordingly edited the V
tions table
Added Industrial Temperature Grade
Replaced TBDs for I
grades
Changed the C
Capacitance Table
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS TRI-STATE on Page
17
Removed the capacitance value column for the x9 option from Capacitance Table
Added lead-free product information
Updated the Ordering Information by Shading and unshading as per availability
Added CY7C1528V18 part number to title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North
First Street” to “198 Champion Court”
Changed C, C Description in Feature Section and Pin Description
Added power-up sequence details and waveforms
Added foot notes #14, 15, 16 On page# 19
Replaced Three-state with Tri-state
Changed the description of I
Modified the I
Modified test condition in Footnote #18 on page# 20 from V
Replaced Package Name column with Package Diagram in the Ordering Information table
Converted from Preliminary to Final
Modified the ZQ Definition from Alternately, this pin can be connected directly to V
Alternately, this pin can be connected directly to V
Included Maximum Ratings for Supply Voltage on V
Changed the Maximum Ratings for DC Input Voltage from V
Changed t
10 ns to 5 ns and changed t
table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from –10°C to
+85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
Corrected typo in the Functional Description section for burst counter logic
TH
and t
DD
IN
and I
from 5 pF to 5.5 pF and C
TL
DD
from 40 ns to 20 ns, changed t
SB
and I
current values
X
TDOV
SB1
from Input Load Current to Input Leakage Current on page# 19
for 300 MHz, 250 MHz, 200 MHz and 167 MHz speed
Description of Change
from 20 ns to 10 ns in TAP AC Switching Characteristics
O
from 7 pF to 8 pF in the
SS
DDQ
/144M And V
TMSS
DDQ
Relative to GND
, t
TDIS
DDQ
DDQ
, t
SS
< V
CS
to V
/288M on the Pin Defini-
CY7C1517V18
CY7C1528V18
CY7C1519V18
CY7C1521V18
, t
DD
DD
TMSH
to V
, t
DDQ
TDIH
Page 28 of 28
< V
, t
CH
DD
DD
from
to