CY7C1512AV18-200BZXC Cypress Semiconductor Corp, CY7C1512AV18-200BZXC Datasheet - Page 24

• Manufacturer Part Number: CY7C1512AV18-200BZXC
• Description: IC SRAM 72MBIT 200MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512AV18-200BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05565 Rev. *E
Switching Waveforms
Notes:
29. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1.
30. Output are disabled (High-Z) one clock cycle after a NOP.
31. In this example, if address A2 = A1, then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole
R/W
DQ
CQ
CQ
LD
C
C
diagram.
K
K
A
1
NOP
t KH
t KHCH
t KL
t
t SA
SC
A0
t KHCH
READ
(burst of 4)
2
t HC
t
HA
t CYC
t CQOH
3
t CLZ
t KHKH
t CQOH
[29, 30, 31]
A1
Q00
4
t CCQO
READ
(burst of 4)
Q01
t DOH
t CCQO
Q02
5
Q03
t CO
t CQD
NOP
Q10
6
t KH
Q11
t CQDOH
t KL
Q12
NOP
7
t CYC
Q13
A2
WRITE
(burst of 4)
8
t CHZ
t SD
t
KHKH
t HD
D20 D21 D22 D23
9
t SD
A3
t HD
10
WRITE
(burst of 4)
t CO
DON’T CARE
D30 D31 D32 D33
11
CY7C1517V18
CY7C1528V18
CY7C1519V18
CY7C1521V18
READ
(burst of 4)
12
A4
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UNDEFINED
13